Ferroelectric-Gate Field Effect Transistor Memories

Name: Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
Brand: Springer
SKU: 9789402408393
Price: 5076.00 INR
Availability: InStock

Device Physics and Applications

by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama

Springer

₹5,076

Free delivery. Nothing extra to pay at checkout.

New copy. Each book is ordered new from our distributor, Atlantic Books, after you place your order.
Delivery in 3–7 days to any serviceable pincode in India, with tracking.
Cash on delivery. Pay when the parcel reaches you.
15-day returns. See what qualifies.

From the publisher

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.

Description supplied by the publisher.