Combinatorial Pattern Matching
Zvi Galil, Esko Ukkonen
₹5,586
Ferroelectric-Gate Field Effect Transistor Memories
Device Physics and Applications
by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama
Springer · 2016 · Hardcover
₹5,076
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About this book
Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications by Byung-Eun Park, Hiroshi Ishiwara & others is a 365-page hardcover edition published by Springer in 2016.
Its main subjects are Ferroelectricity and Field effect transistors.
Book details
- ISBN-13
- 9789402408393
- ISBN-10
- 9402408398
- Authors
- Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama
- Publisher
- Springer
- Published
- 2016
- Binding
- Hardcover
- Pages
- 365
- Language
- English
- Condition
- New
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